a p08p20gs/p-hf advanced power p-channel enhancement mode electronics corp. power mosfet lower on-resistance bv dss -200v simple drive requirement r ds(on) 680m fast switching characteristic i d -8a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.3 /w rthj-a 40 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice 1 rating -200 + 20 -8 0.77 halogen-free product continuous drain current, v gs @ 10v -5 pulsed drain current 1 30 -55 to 150 thermal data parameter total power dissipation operating junction temperature range storage temperature range 201108052 maximum thermal resistance, junction-ambient (pcb mount) 3 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v -55 to 150 linear derating factor 96 g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. the to-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap08p20gp) are available for low-profile applications. g d s to-263(s) g d s to-220(p)
ap08p20gs/p-hf electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -200 - - v bv dss / t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.03 - v/ r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-4a - - 680 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -2 - -4 v g fs forward transconductance v ds =-10v, i d =-5a - 4 - s i dss drain-source leakage current v ds =-200v, v gs =0v - - -25 ua drain-source leakage current (t j =125 o c) v ds =-160v, v gs =0v - - -250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =-5a - 20 32 nc q gs gate-source charge v ds =-160v - 5 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 13 - nc t d(on) turn-on delay time 2 v ds =-100v - 12 - ns t r rise time i d =-5a - 14 - ns t d(off) turn-off delay time r g =10 ,v gs =-10v - 64 - ns t f fall time r d =20 -28- ns c iss input capacitance v gs =0v - 1210 - pf c oss output capacitance v ds =-25v - 170 - pf c rss reverse transfer capacitance f=1.0mhz - 45 - pf r g gate resistance f=1.0mhz - 3.6 5.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-5a, v gs =0v - - -1.3 v t rr reverse recovery time 2 i s =-5a, v gs =0v, - 165 - ns q rr reverse recovery charge di/dt=-100a/s - 1420 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2
ap08p20gs/p-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 3 6 9 12 15 0 3 6 9 12 15 18 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -7.0v -5.0v -4.5v v g = - 3 .0v 0 2 4 6 8 10 0 3 6 9 12 15 18 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -7.0v -5.0v -4.5v v g = - 3 .0v 500 800 1100 1400 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-4a t c =25 0.4 0.9 1.4 1.9 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =- 4 a v g =-10v 0.3 0.7 1.1 1.5 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c
ap08p20gs/p-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 q v g -4.5v q gs q gd q g charge 0.1 1 10 100 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) 1ms 10ms 100ms dc t c =25 o c single pulse 0 2 4 6 8 10 0 10203040 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -5a v ds = -160v 10 100 1000 10000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 1 2 3 4 0246 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds =-5v 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
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